Stress-free ALD From Picosun

Picosun has now developed a method with which zero stress and controlled stress ALD films can be produced. This sophisticated method is based on intricate tuning of process chemistry and deposition conditions. The desired effect is obtained with right selection of precursor chemicals and process temperature, so no additional process steps such as heat or plasma treatments (which might cause structural damage to the film) are required. Replacing a single material film with carefully designed nanolaminate of materials with opposite stress properties is another way to achieve zero stress layers. These methods have been validated with e.g. HfO2, which is one of the key materials in microelectronics industry. Other ALD materials tested include SiO2, Ta2O5, and TiO2 (*).

Finland, 28/08/2018 (informazione.news - comunicati stampa - elettronica)

Picosun has now developed a method with which zero stress and controlled stress ALD films can be produced. This sophisticated method is based on intricate tuning of process chemistry and deposition conditions. The desired effect is obtained with right selection of precursor chemicals and process temperature, so no additional process steps such as heat or plasma treatments (which might cause structural damage to the film) are required. Replacing a single material film with carefully designed nanolaminate of materials with opposite stress properties is another way to achieve zero stress layers. These methods have been validated with e.g. HfO2, which is one of the key materials in microelectronics industry. Other ALD materials tested include SiO2, Ta2O5, and TiO2 (*).

"We are very pleased that we can now offer stress-free ALD HfO2 process to our customers in MEMS and IC industries. Especially medical MEMS is an important market for us, and a prime example of an application area where controlled stress ALD films are needed to enable a whole platform of novel products. Thanks to our unmatched ALD expertise, we have now developed a solution to one of the fundamental challenges in ALD. This will facilitate the implementation of ALD to yet new, exciting applications in health technology and future IC manufacturing," summarizes Dr. Jani Kivioja , CTO of Picosun Group.

(*) In collaboration with VTT Technical Research Centre of Finland . Stress measurements were performed at VTT. The results were initially published in the AVS 18th International Conference on Atomic Layer Deposition (ALD 2018), Incheon, South Korea .

Dr. Jani Kivioja
Tel: +358-50-321-1955
Email: info@picosun.com

Web: www.picosun.com

Minna Toivola
D.Sc., Marketing Manager, Picosun Oy
Email: minna.toivola@picosun.com
Tel: +358-40-758-8748

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