Beneq Launches Beneq Transform® XP - Redefining Atomic Control in ALD
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The Beneq Transform® XP features a second-generation, flow-optimized 25-wafer mini-batch thermal ALD reactor that achieves breakthrough deposition rates with single-digit-second cycle times for common ALD oxides and nitrides. Refined flow and pressure dynamics ensure exceptional within-wafer and wafer-to-wafer uniformity – even at a few nm film thicknesses – while precise dwell-time control delivers excellent conformality on high-aspect-ratio structures.
Transform® XP also introduces advanced PEALD process control to precisely manage low-energy ions. This enables optimized plasma pre-cleaning and deposition, resulting in improved interface quality, tunable passivation, and enhanced device performance and reliability. The system integrates in-cycle annealing, a proprietary step that densifies and purifies films to achieve stoichiometric, low-impurity materials and crystalline alignment, such as AlN lattice orientation.
"Transform® XP is our response to the next wave of device challenges in power and RF manufacturing," said Dr. Mikko Söderlund, Head of Sales, Semiconductor ALD at Beneq. "Customers value the original Transform® for its versatility and reliability. With XP, we introduce capabilities they specifically asked for – improved ion control, faster cycles, and in-cycle film densification – all in a versatile platform."
With over a dozen Beneq Transform® clusters installed globally for WBG pilot and production use, and more than 100 process modules shipped, Beneq continues to support leading IDMs, foundries, and RTOs advancing More-than-Moore technologies.
Learn more about Beneq Transform® XP: here.
CONTACT:
Charlotte Bärlund, Event and Communications Lead
charlotte.barlund@beneq.com
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