U.S. International Trade Commission rules in favor of Infineon in one patent infringement case against Innoscience

The ruling is yet another positive decision which underscores the value of Infineon's contributions to GaN technology. In a parallel dispute in Germany, the German patent office recently confirmed the validity of a patent of Infineon and upheld it in slightly amended form. Infineon is asserting infringement of this patent in the Munich District Court.[3] Already in August 2025, the Munich District Court I (Landgericht München I) found infringement of another Infineon patent by Innoscience.[4] ...

MUNICH, 03/12/2025 (informazione.news - comunicati stampa - elettronica)

The ruling is yet another positive decision which underscores the value of Infineon's contributions to GaN technology. In a parallel dispute in Germany, the German patent office recently confirmed the validity of a patent of Infineon and upheld it in slightly amended form. Infineon is asserting infringement of this patent in the Munich District Court.^[3] Already in August 2025, the Munich District Court I (Landgericht München I) found infringement of another Infineon patent by Innoscience.^[4]

Infineon is a leading integrated device manufacturer (IDM) in the GaN market with the industry's broadest IP portfolio, comprising approximately 450 GaN patent families. With higher power density, faster switching speeds, and lower power losses, GaN semiconductors enable smaller designs, reducing energy consumption and heat generation. As a leader in power systems, Infineon is mastering all three relevant materials: silicon (Si), silicon carbide (SiC) and gallium nitride.  

Press Contact:

Andre Tauber, andre.tauber@infineon.com,  Tel. +49 89 343 6705

^[1] US 9,899,481
^[2] US 9,899,481 and US 9,070,755
^[3] DE102017100947
^[4] DE102014113465

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